US Patent Issued to Silicon Storage Technology on Dec. 30 for "Coarse and fine programming of non-volatile memory cells" (California Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,511,073, issued on Dec. 30, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Coarse and fine programming of non-volatile memory cells" was invented by Yi Song (San Jose, Calif.), Jinho Kim (Saratoga, Calif.) and Xian Liu (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of programming non-volatile memory cells comprising determining a target read current for respective ones of the memory cells based upon incoming data, associating respective ones of the memory cells with a respective one of a plurality of cell groups based upon the determined target read current for the respective memory cell being within a t...