US Patent Issued to Silicon Motion on Nov. 4 for "Control method of memory device, and associated flash memory controller and memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,461,656, issued on Nov. 4, was assigned to Silicon Motion Inc. (Hsinchu County, Taiwan).

"Control method of memory device, and associated flash memory controller and memory device" was invented by Wen-Sheng Lin (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A control method of a memory device includes: updating a wear leveling related data temporarily stored in a buffer memory; obtaining multiple parameters; determining a write frequency according to the multiple parameters; and copying the wear leveling related data from the buffer memory to a flash memory module included in the memory device according to the write frequency."

The pa...