US Patent Issued to Silicon-Magic Semiconductor Technology (Hangzhou) on Nov. 4 for "Metal oxide semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,754, issued on Nov. 4, was assigned to Silicon-Magic Semiconductor Technology (Hangzhou) Co. Ltd. (Hangzhou, China).

"Metal oxide semiconductor device and method for manufacturing the same" was invented by He Sun (Hangzhou, China) and Jiakun Wang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a metal oxide semiconductor device and a method for manufacturing the same. The metal oxide semiconductor device includes a semiconductor substrate, a patterned field oxide layer, first JFET implantation regions and second JFET implantation regions. Active regions and gate regions are formed on an upper surface of...