US Patent Issued to Silicon-Magic Semiconductor Technology (Hangzhou) on Nov. 4 for "LDMOS device and method for fabricating the same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,765, issued on Nov. 4, was assigned to Silicon-Magic Semiconductor Technology (Hangzhou) Co. Ltd. (Hangzhou, China).

"LDMOS device and method for fabricating the same" was invented by Bing Wu (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An LDMOS device and a fabrication method for fabricating the same are provided. The LDMOS device includes: a substrate, which is of a first dopant type; an epitaxial layer, which is of the first dopant type and formed on the substrate; a gate structure disposed on an upper surface of the epitaxial layer; a well region of the first dopant type and a drift region of a second dopant type, both disposed...