ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,706, issued on Nov. 11, was assigned to Silicon-Magic Semiconductor Technology (Hangzhou) Co. Ltd. (Hangzhou, China).
"Method for manufacturing trench-gate MOSFET" was invented by He Sun (Hangzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for manufacturing a trench-gate MOSFET. In the method, a first trench is formed in a first region and a second trench is formed in a second region in an epitaxial layer. A first well is formed in a bottom surface of the first trench in the first region, and a body region is formed in the epitaxial layer in the second region, simultaneously in one ion implantati...