US Patent Issued to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) on Jan. 13 for "VDMOS device and method for fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,042, issued on Jan. 13, was assigned to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) Co. LTD. (Hangzhou, China).

"VDMOS device and method for fabricating the same" was invented by He Sun (Hangzhou, China) and Jiakun Wang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A VDMOS device and a fabrication method thereof are provided. The device includes unit cells which jointly form a cellular structure. The cellular structure includes spaced-apart source regions and surrounding gate regions. Some gate regions overlap to form gate intersections comprising separation regions; the others form non-intersecting gate regions. Each unit ce...