US Patent Issued to Silicon-Magic Semiconductor Technology (Hangzhou) on Dec. 9 for "Manufacturing method of trench-type power device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,563, issued on Dec. 9, was assigned to Silicon-Magic Semiconductor Technology (Hangzhou) Co. Ltd. (Hangzhou, China).

"Manufacturing method of trench-type power device" was invented by Xiao Yang (Hangzhou, China), Hui Chen (Hangzhou, China) and Jiakun Wang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a manufacturing method of a trench-type power device. The manufacturing method comprises: forming a drift region; forming a first trench and a second trench in the drift region; forming a gate stack in the first trench; forming a doped region and a well region of P type in the drift region by performing first ion implantati...