US Patent Issued to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) on Dec. 30 for "Shielded-gate-trench semiconductor structure and shielded-gate-trench semiconductor device" (California Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,964, issued on Dec. 30, was assigned to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) Co. LTD. (Hangzhou, China).

"Shielded-gate-trench semiconductor structure and shielded-gate-trench semiconductor device" was invented by Jian Liu (Torrance, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SGT semiconductor structure is provided, which includes a stack of semiconductor layers, an interlayer insulating layer, a front metal layer, and at least two contact terminals. Deep trenches are formed in the stack of semiconductor layers; an oxide layer is formed on an inner surface of each deep trench, and each deep trench is filled with a source p...