US Patent Issued to Silicon Laboratories on Sept. 9 for "Dual band loop and inverted-F ground edge radiating antenna structure" (Hungarian, Finnish Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,983, issued on Sept. 9, was assigned to Silicon Laboratories Inc. (Austin, Texas).

"Dual band loop and inverted-F ground edge radiating antenna structure" was invented by Tuomas Hanninen (Helsinki) and Attila Zolomy (Budapest, Hungary).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dual band antenna structure is disclosed. The dual band antenna structure utilizes features from loop ground edge radiating antennas and inverted-F antennas to create an antenna that has two resonance frequencies. The dual band antenna structure includes a loop ground edge radiating antenna, which has a first resonance frequency. A monopole branch is also located at the...