US Patent Issued to Silergy Semiconductor Technology (Hangzhou) on May 20 for "Semiconductor structure having a semiconductor substrate and an isolation component" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,098, issued on May 20, was assigned to Silergy Semiconductor Technology (Hangzhou) LTD (Hangzhou, China).

"Semiconductor structure having a semiconductor substrate and an isolation component" was invented by Yicheng Du (Hangzhou, China), Meng Wang (Hangzhou, China) and Hui Yu (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure can include: a semiconductor substrate having a first region, a second region, and an isolation region disposed between the first region and the second region; an isolation component located in the isolation region; and where the isolation component is configured to recombine first carrier...