ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,367, issued on Oct. 14, was assigned to Silanna UV Technologies Pte Ltd (Singapore).
"Epitaxial oxide transistor" was invented by Petar Atanackovic (Henley Beach South, Australia).
According to the abstract* released by the U.S. Patent & Trademark Office: "The techniques described herein relate to a transistor, including a substrate, an epitaxial buffer layer, an epitaxial channel layer, and a gate layer. The substrate includes a first oxide material with a first crystal symmetry, the epitaxial buffer layer includes a second oxide material with a second crystal symmetry, the epitaxial channel layer includes a third oxide material with a third crystal symmetry and a first bandgap,...