ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,863, issued on Nov. 4, was assigned to Silanna UV Technologies Pte Ltd (Singapore).
"Epitaxial oxide transistor" was invented by Petar Atanackovic (Henley Beach South, Australia).
According to the abstract* released by the U.S. Patent & Trademark Office: "The techniques described herein relate to a transistor including a substrate including sapphire, an epitaxial channel layer on the substrate, and an epitaxial gate layer on the channel layer. The epitaxial channel layer can include Alpha-Ga2O3, with a first bandgap. The epitaxial gate layer can include an oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap. The transistor can also incl...