ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,258, issued on March 18, was assigned to Silanna UV Technologies Pte Ltd (Singapore).
"Semiconductor device" was invented by Petar Atanackovic (Henley Beach South, Australia).
According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayered semiconductor device including a substrate including n-type or p-type doped silicon carbide (SiC), an epitaxial oxide layer above the substrate, and a metal layer above the epitaxial oxide layer. In some cases, the epitaxial oxide layer includes n-type conductivity and the substrate is p-type doped, and the substrate and the epitaxial oxide layer form a p/n junction. In some cases, the device can further include an e...