US Patent Issued to Silanna UV Technologies on Dec. 16 for "Metal oxide semiconductor-based light emitting device" (Australian Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,747, issued on Dec. 16, was assigned to Silanna UV Technologies Pte Ltd (Singapore).

"Metal oxide semiconductor-based light emitting device" was invented by Petar Atanackovic (Henley Beach South, Australia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region i...