ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,309, issued on April 15, was assigned to Silanna UV Technologies Pte Ltd (Singapore).
"Epitaxial oxide materials, structures, and devices" was invented by Petar Atanackovic (Henley Beach South, Australia).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the...