US Patent Issued to SiFotonics Technologies (Beijing) on Dec. 2 for "Normal-incident photodiode structure with dark current self-compensation function" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,525, issued on Dec. 2, was assigned to SiFotonics Technologies (Beijing) Co. Ltd. (Beijing).

"Normal-incident photodiode structure with dark current self-compensation function" was invented by Bin Shi (Beijing), Fan Qi (Beijing) and Pengfei Cai (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a normal-incident photodiode structure with a dark current self-compensation function, including a photosensitive photodiode and a compensating photodiode, where a photosensitive surface of the compensating photodiode is provided with a light-blocking layer, and dark currents of the photosensitive photodiode and the compensa...