US Patent Issued to SHIN-ETSU HANDOTAI on Oct. 7 for "Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,101, issued on Oct. 7, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device" was invented by Junya Ishizaki (Takasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bonded semiconductor light-receiving device including an epitaxial layer to serve as a device-functional layer, and a support substrate made of a material different from that of the device-functional layer and bonded to the epitaxial layer via a bonding material layer. The device-functional layer has a bonding surface with an uneven pattern formed thereon."

The p...