ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,647, issued on Nov. 25, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).
"Method for forming thermal oxide film on semiconductor substrate" was invented by Tsuyoshi Ohtsuki (Annaka, Japan) and Tatsuo Abe (Shirakawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates each having a chemical oxide film having a different constitution formed by cleaning, performing a thermal oxidization treatment under identical thermal oxidization treatment conditions to for...