ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,225, issued on May 20, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).
"Method for forming thermal oxide film on semiconductor substrate" was invented by Tsuyoshi Ohtsuki (Annaka, Japan) and Tatsuo Abe (Shirakawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates; a substrate cleaning step of cleaning a semiconductor substrate; a thermal oxide film thickness estimation step of determining a constitution of a chemical oxide film formed on the semiconductor substrate by the clean...