US Patent Issued to SHIN-ETSU HANDOTAI on July 1 for "Method for measuring DIC defect shape on silicon wafer and polishing method" (Japanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,345,659, issued on July 1, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Method for measuring DIC defect shape on silicon wafer and polishing method" was invented by Kazuya Tomii (Shirakawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for measuring a DIC defect shape on a silicon wafer, the method including steps of: detecting a DIC defect on a main surface of the silicon wafer with a particle counter; specifying position coordinates of the detected DIC defect; and measuring a shape including at least a height or depth of the detected DIC defect by utilizing the specified position coordinates according to phase-shifting interfer...