US Patent Issued to SHIN-ETSU HANDOTAI on July 1 for "Method for evaluating crystal defects in silicon carbide single crystal wafer" (Japanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,345,660, issued on July 1, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Method for evaluating crystal defects in silicon carbide single crystal wafer" was invented by Yutaka Shiga (Annaka, Japan), Toru Takahashi (Annaka, Japan) and Hisao Muraki (Annaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for evaluating crystal defects in a silicon carbide single crystal wafer, the method including steps of: etching a silicon carbide single crystal wafer with melted KOH so that a size of an etch pit due to a threading edge dislocation is 10 to 50 micro metre; obtaining microscopic images by automatic photographing at a plurality of posi...