US Patent Issued to SHIN-ETSU CHEMICAL on Sept. 30 for "Method for producing a crystalline oxide semiconductor film and a gallium oxide film, and a method for producing a vertical semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,348, issued on Sept. 30, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Method for producing a crystalline oxide semiconductor film and a gallium oxide film, and a method for producing a vertical semiconductor device" was invented by Takenori Watabe (Annaka, Japan) and Hiroshi Hashigami (Annaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semi...