ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,434, issued on Sept. 23, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Composite substrate and production method therefor" was invented by Shoji Akiyama (Annaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a composite substrate in which a wafer to be bonded has a sufficiently small surface roughness and which can be prevented from causing film peeling, and a method for producing the composite substrate. The composite substrate 40 of the present invention has a silicon wafer 10, an interlayer 11, and a single-crystal silicon thin film or oxide single-crystal thin film 20a stacked in the order listed and has a damaged la...