ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,436,462, issued on Oct. 7, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).
"Positive resist composition and pattern forming process" was invented by Jun Hatakeyama (Joetsu, Japan), Kousuke Ohyama (Joetsu, Japan) and Shun Kikuchi (Joetsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A positive resist composition is provided comprising a base polymer end-capped with a sulfonium salt containing a carboxylate anion having a sulfide group linked thereto. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation."
The patent was...