US Patent Issued to Shin-Etsu Chemical on March 11 for "Method for producing SiC single crystal and method for suppressing dislocations in SiC single crystal" (Japanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,247,318, issued on March 11, was assigned to Shin-Etsu Chemical Co. Ltd. (Tokyo).

"Method for producing SiC single crystal and method for suppressing dislocations in SiC single crystal" was invented by Norio Yamagata (Echizen, Japan), Naofumi Shinya (Echizen, Japan), Yu Hamaguchi (Echizen, Japan), Toshihiro Tsumori (Echizen, Japan) and Takehisa Minowa (Echizen, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC single crystal is produced by impregnating a molten alloy of silicon and a metallic element M that increases carbon solubility into a SiC sintered body to form a SiC crucible, placing silicon and M in the crucible and heating the crucibl...