US Patent Issued to SHIN-ETSU CHEMICAL on June 17 for "Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process" (Japanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,332,565, issued on June 17, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process" was invented by Tsutomu Ogihara (Joetsu, Japan), Tsukasa Watanabe (Joetsu, Japan), Yusuke Biyajima (Joetsu, Japan), Masahiro Kanayama (Joetsu, Japan) and Ryo Mitsui (Joetsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown...