US Patent Issued to SHIN-ETSU CHEMICAL on June 17 for "Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound" (Japanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,332,567, issued on June 17, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound" was invented by Keisuke Niida (Joetsu, Japan), Yusuke Kai (Joetsu, Japan) and Tsutomu Ogihara (Joetsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containin...