ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,725, issued on June 10, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).
"Method for manufacturing gallium oxide film" was invented by Takenori Watabe (Annaka, Japan) and Hiroshi Hashigami (Annaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a gallium oxide film where a mist generated by atomizing a raw-material solution or by forming a raw-material solution into droplets is conveyed using a carrier gas, the mist is heated, and the mist is subjected to a thermal reaction on the substrate to form a film, whereas the raw-material solution, a raw-material solution containing at least a chloride ion and a gallium ...