US Patent Issued to SHIN-ETSU CHEMICAL on Feb. 3 for "Fluoroplastic substrate for high-speed communications and copper-clad fluoroplastic substrate for high-speed communications" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,540,222, issued on Feb. 3, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).

"Fluoroplastic substrate for high-speed communications and copper-clad fluoroplastic substrate for high-speed communications" was invented by Toshio Shiobara (Tokyo), Ryunosuke Nomura (Annaka, Japan) and Hajime Itokawa (Annaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fluoroplastic substrate for high-speed communications has a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0008 and a permittivity at 40 GHz of from 2.0 to 3.2. The substrate includes a quartz glass cloth having a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0008 and a fluoroplastic...