ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,487,524, issued on Dec. 2, was assigned to SHIN-ETSU CHEMICAL Co. LTD. (Tokyo).
"Resist material and patterning process" was invented by Jun Hatakeyama (Joetsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is neces...