US Patent Issued to SHEYANG KINGSEMI on Jan. 27 for "Semiconductor substrate heating device, semiconductor device and temperature control method" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,754, issued on Jan. 27, was assigned to SHEYANG KINGSEMI Co. Ltd. (Shenyang, China).

"Semiconductor substrate heating device, semiconductor device and temperature control method" was invented by Yuanbin Sun (Shenyang, China), Xinglong Chen (Shenyang, China), Yunhe Jiang (Shenyang, China) and Yu Han (Shenyang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a semiconductor substrate heating device, comprising a heating cavity, a main heating part, a compensation control part and at least one temperature compensation unit. The compensation control part and several temperature compensation units are arranged in the heating ...