US Patent Issued to Shenzhen Sanrise-Tech on March 18 for "SiC MOSFET device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,561, issued on March 18, was assigned to Shenzhen Sanrise-Tech Co. LTD (Guangdong, China).

"SiC MOSFET device and method for manufacturing the same" was invented by Dajie Zeng (Guangdong, China) and Rong Jiang (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses an SiC MOSFET device, including an SiC epitaxial layer in which a trench gate is formed, wherein a first bottom doped region is formed below a bottom surface of a gate trench, a second deep doped region with spacing from the gate trench is formed in the SiC epitaxial layer, the first bottom doped region is connected to a source so that voltage b...