US Patent Issued to Shenzhen Sanrise-Tech on June 17 for "Super junction structure and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,234, issued on June 17, was assigned to Shenzhen Sanrise-Tech Co. LTD (Guangdong, China).

"Super junction structure and method for manufacturing the same" was invented by Shengan Xiao (Guangdong, China) and Dajie Zeng (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a super junction device, which includes: an N-type redundant epitaxial layer and an N-type buffer layer sequentially formed on an N-type semiconductor substrate; a trench filled super junction structure is formed on the N-type buffer layer; a back structure includes a drain region and a patterned back P-type impurity region; the N-type se...