US Patent Issued to Shenzhen Newsonic Technologies on July 8 for "Lithium niobate or lithium tantalate FBAR structure and fabricating method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,355,412, issued on July 8, was assigned to Shenzhen Newsonic Technologies Co. Ltd. (Shenzhen, China).

"Lithium niobate or lithium tantalate FBAR structure and fabricating method thereof" was invented by Jian Wang (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a film bulk acoustic resonator (FBAR) structure includes: obtaining a wafer, at least a portion of the wafer is made of a piezoelectric material; forming a bottom electrode layer on the wafer; patterning the bottom electrode layer to form a bottom electrode; forming a sacrificial island on the bottom electrode; bonding a bottom cap wafer onto the bottom elec...