US Patent Issued to SHENZHEN NEW DEGREE TECHNOLOGY on June 10 for "Pressure-sensitive structure and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,326,375, issued on June 10, was assigned to SHENZHEN NEW DEGREE TECHNOLOGY Co. LTD. (Shenzhen, China).

"Pressure-sensitive structure and electronic device" was invented by Tuoxia Huang (Guangdong, China) and Jinbo Yu (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pressure-sensitive structure and an electronic device are provided in the present application, in the structure of the pressure-sensitive structure, a first elastic carrier is arranged on a first mounting surface of the substrate, a semiconductor film is arranged on the first elastic carrier. When the substrate is deformed, the first elastic carrier is bent and deformed with...