US Patent Issued to SHENZHEN JING XIANG TECHNOLOGIES on June 3 for "Semiconductor epitaxial structure and application and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,278, issued on June 3, was assigned to SHENZHEN JING XIANG TECHNOLOGIES Co. LTD. (Shenzhen, China).

"Semiconductor epitaxial structure and application and manufacturing methods thereof" was invented by Weijun Chen (Shenzhen, China) and Meihua Liu (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor epitaxial structure, an application thereof and a manufacturing method therefor are provided. The semiconductor epitaxial structure includes a substrate, an aluminum nitride layer formed on the substrate, and a gallium nitride layer formed on the aluminum nitride layer. The semiconductor epitaxial structure can be applied in a se...