US Patent Issued to SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES on March 25 for "In-situ magnesium hydroxide nanosheet layer modified magnesium alloy and preparation and application thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,258,656, issued on March 25, was assigned to SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES (Guangdong, China).

"In-situ magnesium hydroxide nanosheet layer modified magnesium alloy and preparation and application thereof" was invented by Guomin Wang (Guangdong, China), Huaiyu Wang (Guangdong, China) and Kimho Paul Chu (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a magnesium alloy material, which is an in situ magnesium hydroxide nanosheet layer modified magnesium alloy. The material is prepared from a magnesium alloy through a hydrothermal reaction under alkaline condition. T...