US Patent Issued to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY on June 10 for "Special-shaped thin-film transistor and array substrate" (Chinese Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,942, issued on June 10, was assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY Co. LTD. (Guangdong, China).

"Special-shaped thin-film transistor and array substrate" was invented by Rui Gao (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A special-shaped thin-film transistor and an array substrate are provided. The special-shaped thin-film transistor includes a first gate portion, a first compensation electrode, and a first source electrode. The first compensation electrode is connected to the first gate portion. The first source electrode includes a first extension part, a first source portion, and a s...