US Patent Issued to Shenzhen Adaps Photonics Technology on March 25 for "Single photon avalanche diode and manufacturing method, detector array, and image sensor" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,230, issued on March 25, was assigned to Shenzhen Adaps Photonics Technology Co. LTD. (Shenzhen, China).

"Single photon avalanche diode and manufacturing method, detector array, and image sensor" was invented by Kai Zang (Shenzhen, China), Shuang Li (Shenzhen, China) and Zhijie Ma (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single-photon avalanche diode and a manufacturing method thereof, a detector array, and an image sensor are disclosed. The back-side illuminated single-photon avalanche diode is disposed with a light-trapping structure and a sidewall reflection wall. Incident light is reflected, scattered, and refracted by ...