US Patent Issued to SHENZHEN ADAPS PHOTONICS TECHNOLOGY on March 18 for "Single-photon avalanche diode devices with shaped junction regions" (Chinese, American Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,574, issued on March 18, was assigned to SHENZHEN ADAPS PHOTONICS TECHNOLOGY Co. LTD. (Shenzhen, China).

"Single-photon avalanche diode devices with shaped junction regions" was invented by Ching-Ying Lu (Shenzhen, China), Yangsen Kang (San Jose, Calif.) and Shuang Li (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is directed to electrical circuits. In a specific embodiment, the present invention provides a Single-Photon Avalanche Detector (SPAD) circuit that includes a junction region that is characterized by a wave-shaped profile that corresponds to a plurality of filling structures. The wave-shaped profile ...