ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,497,289, issued on Dec. 16, was assigned to Sharp K.K. (Sakai, Japan).
"Quantum dot, self-luminous device, and method for manufacturing quantum dot" was invented by Yoshihiro Ueta (Sakai, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A quantum dot includes: an inner barrier layer; a quantum well layer formed on at least a part of the inner barrier layer, wherein a presence or absence of the quantum well layer or a thickness of the quantum well layer varies from location to location on the inner barrier layer; and an outer barrier layer formed on a surface of the quantum well layer opposite to a surface adjacent to the inner barrier layer."
The p...