ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,124, issued on Oct. 21, was assigned to Sharp Display Technology Corp. (Kameyama, Japan).

"Thin film transistor substrate, display device, and manufacturing method for thin film transistor substrate" was invented by Kazunari Sasaki (Kameyama, Japan), Kimihiko Hayashi (Kameyama, Japan), Ryuji Matsumoto (Kameyama, Japan) and Takashi Terauchi (Kameyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor substrate includes a substrate and a bottom gate-type thin film transistor, in which a gate insulating film is provided, a gate electrode is made of a first conductive film disposed on a lower layer side of the gate insulating f...