ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,414, issued on July 1, was assigned to SHARP DISPLAY TECHNOLOGY Corp. (Kameyama, Japan).
"Semiconductor device" was invented by Tetsuo Kikuchi (Kameyama, Japan), Tohru Daitoh (Kameyama, Japan), Masahiko Suzuki (Kameyama, Japan), Setsuji Nishimiya (Kameyama, Japan), Kengo Hara (Kameyama, Japan) and Hitoshi Takahata (Kameyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Each first thin film transistor of a semiconductor device includes: a lower electrode; a first oxide semiconductor layer including a channel region and first and second contact regions; a gate electrode disposed on the channel region with a gate insulating layer interposed ther...