US Patent Issued to Shaoxing Yuanfang Semiconductor, Spirit Semiconductor on Dec. 30 for "Bias block for biasing transistors exhibiting non-linearity when designed for linear operation" (Indian Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,796, issued on Dec. 30, was assigned to Shaoxing Yuanfang Semiconductor Co. Ltd. (Shaoxing, China) and Spirit Semiconductor Ltd. (Reading, Great Britain).

"Bias block for biasing transistors exhibiting non-linearity when designed for linear operation" was invented by Nigesh Baladhandapani (Bangalore, India), Gopikrishna Reddy Gudibandla (Bangalore, India) and Sandeep Mallya Perdoor (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bias block for providing a bias voltage includes a transistor having a control terminal, a first current terminal and a second current terminal. A voltage level at the control terminal determines a magnitu...