US Patent Issued to SHANGHAI UNITED IMAGING MICROELECTRONICS TECHNOLOGY on Jan. 27 for "Devices and methods for noise testing of a substrate including through silicon vias" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,519, issued on Jan. 27, was assigned to SHANGHAI UNITED IMAGING MICROELECTRONICS TECHNOLOGY Co. LTD. (Shanghai).

"Devices and methods for noise testing of a substrate including through silicon vias" was invented by Changzhi Shi (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a device and a method for noise testing of a substrate including through silicon vias (TSVs). The device may include a substrate including first TSVs; an excitation link including at least two groups of second TSVs; an insulation layer arranged between the excitation link and the substrate; and a testing link including at le...