US Patent Issued to SHANGHAI LONGSHENG PHOTOELECTRIC NEW MATERIAL on March 18 for "Method for manufacturing PDLC membrane electrode, negative pressure platform and PDLC membrane" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,253,767, issued on March 18, was assigned to SHANGHAI LONGSHENG PHOTOELECTRIC NEW MATERIAL Co. LTD. (Shanghai).

"Method for manufacturing PDLC membrane electrode, negative pressure platform and PDLC membrane" was invented by Yung-Lung Wu (Jiangsu, China), Pin-Hung Lee (Jiangsu, China) and Rui Sun (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a method for manufacturing a PDLC membrane electrode, a negative pressure platform, and a PDLC membrane. The method for manufacturing a PDLC membrane electrode includes the following steps: placing a PDLC membrane on a negative pressure platform with a side to be processed facing upwar...