ALEXANDRIA, Va., March 19 -- United States Patent no. 12,251,680, issued on March 18, was assigned to SHANGHAI JIAO TONG UNIVERSITY (Shanghai).

"Hierarchical porous defect UiO-66 material and its preparation method" was invented by Jinming Luo (Shanghai), Chunyu Lv (Shanghai), Yitao Pan (Shanghai) and Nanwen Zhu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a hierarchical porous defect UiO-66 material and a preparation method thereof. The method includes the following steps: mixing a zirconium ion source, a mixed ligand, an organic acid, an organic good solvent, and water to obtain a mixture; and subjecting the mixture to reaction while heating, washing, freeze-drying, and heat treatm...