US Patent Issued to SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER, SHANGHAI IC R&D CENTER on June 24 for "Memory array structure" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,550, issued on June 24, was assigned to SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER Co. LTD (Shanghai) and SHANGHAI IC R&D CENTER Co. LTD (Shanghai).

"Memory array structure" was invented by Ling Shen (Shanghai), Yu Jiang (Shanghai), Huijie Yan (Shanghai), Zhifang Li (Shanghai), Linmei Dong (Shanghai), Jiebin Duan (Shanghai) and Jianxin Wen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention disclosures a memory array structure, comprising an array composed of multiple memory devices arranged in rows and columns, each of the rows is set with a row leading-out wire, and each of the columns i...