US Patent Issued to Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center, SHANGHAI IC R&D CENTER on April 15 for "Phase change memory unit and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,538, issued on April 15, was assigned to Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co. Ltd (Shanghai) and SHANGHAI IC R&D CENTER Co. LTD. (Shanghai).

"Phase change memory unit and preparation method therefor" was invented by Min Zhong (Shanghai), Ming Li (Shanghai), Shoumian Chen (Shanghai) and Gaoming Feng (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention disclosures a phase change memory unit, wherein comprising from bottom to top: a bottom electrode, a heating electrode, a phase change unit and a top electrode, the phase change unit is a longitudinally arranged column, which comprises...