US Patent Issued to SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES on May 20 for "Infrared photodetector based on van der waals heterostructure and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,126, issued on May 20, was assigned to SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES (Shanghai).

"Infrared photodetector based on van der waals heterostructure and preparation method thereof" was invented by Fang Wang (Shanghai), Fuxing Dai (Shanghai), Weida Hu (Shanghai), Xiaoshuang Chen (Shanghai) and Wei Lu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructu...